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MUR20060CTR Технические параметры

GeneSiC Semiconductor  MUR20060CTR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка GeneSiC Semiconductor
Lifecycle Status PRODUCTION (Last Updated: 4 months ago)
Factory Lead Time 6 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 175°C
Packaging Bulk
Published 2013
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Applications SUPER FAST RECOVERY
Terminal Position UPPER
Terminal Form UNSPECIFIED
Свойство продукта Значение свойства
JESD-30 Code R-PUFM-X2
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 50A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 800A
Output Current-Max 100A
Current - Average Rectified (Io) 200A DC
Max Reverse Voltage (DC) 600V
Average Rectified Current 200A
Number of Phases 1Phase
Reverse Recovery Time 110 ns
Peak Reverse Current 25μA
Non-rep Pk Forward Current-Max 400A
Reverse Voltage 600V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant

MUR20060CTR Документы

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