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G3S12010B Технические параметры

Global Power  G3S12010B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка Global Power
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AB
Rad Hardened No
Package Cut Tape (CT);Tape & Box (TB);
Mfr Global Power Technology-GPT
Product Status Active
Current - Average Rectified (Io) (per Diode) 39A (DC)
Свойство продукта Значение свойства
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 1200 V
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G3S12010B brand manufacturers: Global Power, Anli stock, G3S12010B reference price.Global Power. G3S12010B parameters, G3S12010B Datasheet PDF and pin diagram description download.You can use the G3S12010B Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find G3S12010B pin diagram and circuit diagram and usage method of function,G3S12010B electronics tutorials.You can download from the Anli.