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G5S12010BM Технические параметры

Global Power  G5S12010BM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка Global Power
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AB
Package Cut Tape (CT);Tape & Box (TB);
Mfr Global Power Technology-GPT
Product Status Active
Current - Average Rectified (Io) (per Diode) 19.35A (DC)
Свойство продукта Значение свойства
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 5 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 1200 V
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G5S12010BM brand manufacturers: Global Power, Anli stock, G5S12010BM reference price.Global Power. G5S12010BM parameters, G5S12010BM Datasheet PDF and pin diagram description download.You can use the G5S12010BM Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find G5S12010BM pin diagram and circuit diagram and usage method of function,G5S12010BM electronics tutorials.You can download from the Anli.