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G3S12003H Технические параметры

Global Power Technology-GPT  G3S12003H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package TO-220F
Mfr Global Power Technology-GPT
Package Tape & Box (TB)
Product Status Active
Series -
Свойство продукта Значение свойства
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 100 μA @ 1200 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 3 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 9A
Capacitance @ Vr, F 260pF @ 0V, 1MHz
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G3S12003H brand manufacturers: Global Power Technology-GPT, Anli stock, G3S12003H reference price.Global Power Technology-GPT. G3S12003H parameters, G3S12003H Datasheet PDF and pin diagram description download.You can use the G3S12003H Diodes - Rectifiers - Single, DSP Datesheet PDF, find G3S12003H pin diagram and circuit diagram and usage method of function,G3S12003H electronics tutorials.You can download from the Anli.