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G3S12010H Технические параметры

Global Power Technology-GPT  G3S12010H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-2 Full Pack
Supplier Device Package TO-220F
Mfr Global Power Technology-GPT
Product Status Active
Package TO-220F
IF(A) Tc=125℃ 10（111°C）
Vrrm(V) 1200
IR（uA）Tj=25℃ typ 0.7
VF（V）Tj=175℃typ 2.35
VF（V）Tj=25℃ typ 1.55
Ifsm(A),Tc=25℃ 140
IR（uA）Tj=25℃max 50
VF（V）Tj=175℃max 2.6
Свойство продукта Значение свойства
VF（V）Tj=25℃max 1.7
IF(A) Tc=25℃ 16.5
IF(A),Tc=160℃ 8.5（125°C）
Config. Single Core
IR（uA）Tj=175℃typ 3
IR（uA）Tj=175℃max 100
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 μA @ 1200 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 16.5A
Capacitance @ Vr, F 765pF @ 0V, 1MHz
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G3S12010H brand manufacturers: Global Power Technology-GPT, Anli stock, G3S12010H reference price.Global Power Technology-GPT. G3S12010H parameters, G3S12010H Datasheet PDF and pin diagram description download.You can use the G3S12010H Diodes - Rectifiers - Single, DSP Datesheet PDF, find G3S12010H pin diagram and circuit diagram and usage method of function,G3S12010H electronics tutorials.You can download from the Anli.