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G4S06506AT Технические параметры
Global Power Technology-GPT G4S06506AT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-220-2 | |
| Supplier Device Package | TO-220AC | |
| Mfr | Global Power Technology-GPT | |
| Product Status | Active | |
| Package | TO-220AC | |
| IR（uA）Tj=175℃max | 100 | |
| IR（uA）Tj=25℃max | 50 | |
| VF（V）Tj=175℃max | 2.8 | |
| VF（V）Tj=25℃max | 1.8 | |
| IF(A) Tc=25℃ | 11.6 | |
| IF(A),Tc=160℃ | 6(127°C） | |
| IR（uA）Tj=175℃typ | 0.65 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| IR（uA）Tj=25℃ typ | 0.07 | |
| VF（V）Tj=175℃typ | 2.45 | |
| VF（V）Tj=25℃ typ | 1.68 | |
| Ifsm(A),Tc=25℃ | 35 | |
| IF(A) Tc=125℃ | 6.2 | |
| Series | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Diode Type | Silicon Carbide Schottky | |
| Current - Reverse Leakage @ Vr | 50 μA @ 650 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 6 A | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 11.6A | |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz | |
| Reverse Recovery Time (trr) | 0 ns |
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