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G4S06516BT Технические параметры

Global Power Technology-GPT  G4S06516BT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AB
Mfr Global Power Technology-GPT
Package Tape & Box (TB)
Product Status Active
Current - Average Rectified (Io) (per Diode) 25.9A (DC)
Config. Double
Vrrm(V) 650
IF(A),Tc=160℃ 8*(154.5℃)
Свойство продукта Значение свойства
IF(A),Tc=125℃ 12*(135℃)
Qc(nC),TJ=25℃ 21（VR=400V）
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 μA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G4S06516BT brand manufacturers: Global Power Technology-GPT, Anli stock, G4S06516BT reference price.Global Power Technology-GPT. G4S06516BT parameters, G4S06516BT Datasheet PDF and pin diagram description download.You can use the G4S06516BT Diodes - Rectifiers - Single, DSP Datesheet PDF, find G4S06516BT pin diagram and circuit diagram and usage method of function,G4S06516BT electronics tutorials.You can download from the Anli.