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G4S06520BT Технические параметры

Global Power Technology-GPT  G4S06520BT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AB
Mfr Global Power Technology-GPT
Package Tape & Box (TB)
Product Status Active
Current - Average Rectified (Io) (per Diode) 31.2A (DC)
Qc(nC),TJ=25℃ 28（VR=400V）
IF(A),Tc=125℃ 15.3*
IF(A),Tc=160℃ 10* （155℃）
Свойство продукта Значение свойства
Vrrm(V) 650
Config. Double
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 μA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G4S06520BT brand manufacturers: Global Power Technology-GPT, Anli stock, G4S06520BT reference price.Global Power Technology-GPT. G4S06520BT parameters, G4S06520BT Datasheet PDF and pin diagram description download.You can use the G4S06520BT Diodes - Rectifiers - Single, DSP Datesheet PDF, find G4S06520BT pin diagram and circuit diagram and usage method of function,G4S06520BT electronics tutorials.You can download from the Anli.