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G4S12040BM Технические параметры

Global Power Technology-GPT  G4S12040BM technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Arrays
Марка
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AB
Mfr Global Power Technology-GPT
Package Tape & Box (TB)
Product Status Active
Current - Average Rectified (Io) (per Diode) 64.5A (DC)
Свойство продукта Значение свойства
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 30 μA @ 1200 V
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 20 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 1200 V
Diode Configuration 1 Pair Common Cathode
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G4S12040BM brand manufacturers: Global Power Technology-GPT, Anli stock, G4S12040BM reference price.Global Power Technology-GPT. G4S12040BM parameters, G4S12040BM Datasheet PDF and pin diagram description download.You can use the G4S12040BM Diodes - Rectifiers - Arrays, DSP Datesheet PDF, find G4S12040BM pin diagram and circuit diagram and usage method of function,G4S12040BM electronics tutorials.You can download from the Anli.