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G4S6508Z Технические параметры

Global Power Technology-GPT  G4S6508Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-DFN (4.9x5.75)
Mfr Global Power Technology-GPT
Package Tape & Box (TB)
Product Status Active
Qc(nC),TJ=25℃ 21（VR=400V）
Ifsm(A),Tc=25℃ 54
IF(A),Tc=25℃ 23.2
IF(A),Tc=125℃ 10.9（135℃）
IF(A),Tc=160℃ 8（150.5℃）
Vrrm(V) 650
Свойство продукта Значение свойства
Config. Single
Ptot(W),Tc=110℃ 41
Ptot(W),Tc=25℃ 94
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 μA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 30.5A
Capacitance @ Vr, F 395pF @ 0V, 1MHz
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G4S6508Z brand manufacturers: Global Power Technology-GPT, Anli stock, G4S6508Z reference price.Global Power Technology-GPT. G4S6508Z parameters, G4S6508Z Datasheet PDF and pin diagram description download.You can use the G4S6508Z Diodes - Rectifiers - Single, DSP Datesheet PDF, find G4S6508Z pin diagram and circuit diagram and usage method of function,G4S6508Z electronics tutorials.You can download from the Anli.