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G5S06510QT Технические параметры

Global Power Technology-GPT  G5S06510QT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Surface Mount
Package / Case 4-PowerTSFN
Supplier Device Package 4-DFN (8x8)
Mfr Global Power Technology-GPT
Package Tape & Box (TB)
Product Status Active
Ptot(W),Tc=25℃ 120
Ptot(W),Tc=110℃ 52
Config. Single
Vrrm(V) 650
IF(A),Tc=160℃ 10(154℃)
IF(A),Tc=125℃ 15(135℃)
Свойство продукта Значение свойства
IF(A),Tc=25℃ 31.9
Ifsm(A),Tc=25℃ 90
Qc(nC),TJ=25℃ 32(VR=400V)
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 μA @ 650 V
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 53A
Capacitance @ Vr, F 645pF @ 0V, 1MHz
Reverse Recovery Time (trr) 0 ns
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