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G5S12008A Технические параметры

Global Power Technology-GPT  G5S12008A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - Rectifiers - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package TO-220AC
Mfr Global Power Technology-GPT
Package Tape & Box (TB)
Product Status Active
Qc(nC),TJ=25℃ 38（VR=800V）
Ifsm(A),Tc=25℃ 96
IF(A),Tc=25℃ 24.2
IF(A),Tc=125℃ 11.5（135℃）
IF(A),Tc=160℃ 8(153℃)
Vrrm(V) 1200
Свойство продукта Значение свойства
Config. Single
Ptot(W),Tc=110℃ 47
Ptot(W),Tc=25℃ 109
Series -
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 50 μA @ 1200 V
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 24.8A
Capacitance @ Vr, F 550pF @ 0V, 1MHz
Reverse Recovery Time (trr) 0 ns
Просмотр сходства
G5S12008A brand manufacturers: Global Power Technology-GPT, Anli stock, G5S12008A reference price.Global Power Technology-GPT. G5S12008A parameters, G5S12008A Datasheet PDF and pin diagram description download.You can use the G5S12008A Diodes - Rectifiers - Single, DSP Datesheet PDF, find G5S12008A pin diagram and circuit diagram and usage method of function,G5S12008A electronics tutorials.You can download from the Anli.