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Global Power Technology-GPT G5S6506Z technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | 8-DFN (4.9x5.75) | |
| Mfr | Global Power Technology-GPT | |
| Package | Tape & Box (TB) | |
| Product Status | Active | |
| Qc(nC),TJ=25℃ | 21(VR=400V) | |
| Ifsm(A),Tc=25℃ | 54 | |
| IF(A),Tc=25℃ | 26.5 | |
| IF(A),Tc=125℃ | 12.5(135℃) | |
| IF(A),Tc=160℃ | 6(163℃) | |
| Vrrm(V) | 650 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Config. | Single | |
| Ptot(W),Tc=110℃ | 52 | |
| Ptot(W),Tc=25℃ | 119 | |
| Series | - | |
| Speed | No Recovery Time > 500mA (Io) | |
| Diode Type | Silicon Carbide Schottky | |
| Current - Reverse Leakage @ Vr | 50 μA @ 650 V | |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 6 A | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 30.5A | |
| Capacitance @ Vr, F | 395pF @ 0V, 1MHz | |
| Reverse Recovery Time (trr) | 0 ns |