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GS8160E18DGT-200IV Технические параметры

GSI Technology  GS8160E18DGT-200IV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Package / Case TQFP-100
Maximum Clock Rate 200 MHz
Supplier Package TQFP
Data Rate Architecture SDR
Typical Operating Supply Voltage 1.8, 2.5 V
Minimum Operating Supply Voltage 1.7, 2.3 V
Timing Type Synchronous
Number of Words 1 MWordsWord
Number of I/O Lines 18 BitI/O Line
Maximum Operating Supply Voltage 2, 2.7 V
Mounting Surface Mount
Moisture Sensitive Yes
Maximum Clock Frequency 200 MHz
Maximum Operating Temperature + 100 C
Supply Voltage-Max 2.7 V
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 18
Supply Voltage-Min 1.7 V
Mounting Styles SMD/SMT
Interface Type Parallel
Свойство продукта Значение свойства
Manufacturer GSI Technology
Brand GSI Technology
Tradename SyncBurst
RoHS Details
Memory Types SDR
Usage Level Industrial grade
Operating Temperature -40 to 85 °C
Series GS8160E18DGT
Packaging Tray
Type DCD Synchronous Burst
Subcategory Memory & Data Storage
Pin Count 100
Memory Size 18 Mbit
Number of Ports 2Ports
Supply Current-Max 210 mA, 215 mA
Access Time 6.5 ns
Organization 1 M x 18
Product Type SRAM
Density 18 Mbit
Screening Level Industrial
Product Category SRAM
Просмотр сходства
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