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GS8160E18DGT-250IV Технические параметры
GSI Technology GS8160E18DGT-250IV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Package / Case | TQFP-100 | |
| Maximum Clock Rate | 250 MHz | |
| Supplier Package | TQFP | |
| Typical Operating Supply Voltage | 1.8, 2.5 V | |
| Minimum Operating Supply Voltage | 1.7, 2.3 V | |
| Timing Type | Synchronous | |
| Number of I/O Lines | 18 BitI/O Line | |
| Maximum Operating Supply Voltage | 2, 2.7 V | |
| Moisture Sensitive | Yes | |
| Maximum Clock Frequency | 250 MHz | |
| Maximum Operating Temperature | + 100 C | |
| Supply Voltage-Max | 2.7 V | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 18 | |
| Supply Voltage-Min | 1.7 V | |
| Mounting Styles | SMD/SMT | |
| Interface Type | Parallel |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Manufacturer | GSI Technology | |
| Brand | GSI Technology | |
| Tradename | SyncBurst | |
| RoHS | Details | |
| Memory Types | SDR | |
| Operating Temperature | -40 to 85 °C | |
| Series | GS8160E18DGT | |
| Packaging | Tray | |
| Type | DCD Synchronous Burst | |
| Subcategory | Memory & Data Storage | |
| Pin Count | 100 | |
| Memory Size | 18 Mbit | |
| Supply Current-Max | 225 mA, 245 mA | |
| Access Time | 5.5 | |
| Organization | 1 M x 18 | |
| Product Type | SRAM | |
| Memory Density | 18 | |
| Product Category | SRAM |
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