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GS8161E18DD-333IV Технические параметры

GSI Technology  GS8161E18DD-333IV technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Package / Case BGA-165
Maximum Clock Rate 200@Flow-Through/333@Pipelined MHz
Supplier Package FBGA
Data Rate Architecture SDR
Typical Operating Supply Voltage 1.8, 2.5 V
Minimum Operating Supply Voltage 1.7, 2.3 V
Timing Type Synchronous
Number of Words 1 MWordsWord
Number of I/O Lines 18 BitI/O Line
Maximum Operating Supply Voltage 2, 2.7 V
Mounting Surface Mount
Moisture Sensitive Yes
Maximum Clock Frequency 333 MHz
Maximum Operating Temperature + 85 C
Supply Voltage-Max 2.7 V
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 18
Supply Voltage-Min 1.7 V
Mounting Styles SMD/SMT
Interface Type Parallel
Свойство продукта Значение свойства
Manufacturer GSI Technology
Brand GSI Technology
Tradename SyncBurst
Memory Types SDR
Usage Level Industrial grade
Operating Temperature -40 to 85 °C
Series GS8161E18DD
Packaging Tray
Type DCD Pipeline/Flow Through
Subcategory Memory & Data Storage
Pin Count 165
Memory Size 18 Mbit
Number of Ports 2Ports
Supply Current-Max 240 mA, 300 mA
Access Time 5 ns
Architecture Flow-Through/Pipelined
Organization 1 M x 18
Address Bus Width 20 Bit
Product Type SRAM
Density 18 Mbit
Screening Level Industrial
Product Category SRAM
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