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- GS8182D18BGD-200I
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GS8182D18BGD-200I Технические параметры
GSI Technology GS8182D18BGD-200I technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Factory Lead Time | 8 Weeks | |
| Package / Case | BGA-165 | |
| Surface Mount | YES | |
| Number of Terminals | 165Terminals | |
| Moisture Sensitive | Yes | |
| Maximum Clock Frequency | 200 MHz | |
| Maximum Operating Temperature | + 85 C | |
| Supply Voltage-Max | 1.9 V | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 18 | |
| Supply Voltage-Min | 1.7 V | |
| Mounting Styles | SMD/SMT | |
| Interface Type | Parallel | |
| Manufacturer | GSI Technology | |
| Brand | GSI Technology | |
| Tradename | SigmaQuad-II | |
| RoHS | Details | |
| Memory Types | DDR | |
| Part Package Code | BGA | |
| Risk Rank | 5.18 | |
| Ihs Manufacturer | GSI TECHNOLOGY | |
| Part Life Cycle Code | Active | |
| Package Shape | RECTANGULAR | |
| Package Code | LBGA | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Number of Words | 1048576 wordsWord | |
| Manufacturer Part Number | GS8182D18BGD-200I | |
| Rohs Code | Yes | |
| Operating Temperature-Max | 85 °C | |
| Access Time-Max | 0.45 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Number of Words Code | 1000000Words Codes | |
| Moisture Sensitivity Levels | 3 | |
| Package Style | GRID ARRAY, LOW PROFILE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Description | LBGA, | |
| Series | GS8182D18BGD | |
| Packaging | Tray | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| ECCN Code | 3A991.B.2.B | |
| Type | SigmaQuad-II | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| HTS Code | 8542.32.00.41 | |
| Subcategory | Memory & Data Storage | |
| Technology | CMOS | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Number of Functions | 1Function | |
| Terminal Pitch | 1 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 165 | |
| JESD-30 Code | R-PBGA-B165 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Memory Size | 18 Mbit | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 365 mA | |
| Organization | 1 M x 18 | |
| Seated Height-Max | 1.4 mm | |
| Memory Width | 18 | |
| Product Type | SRAM | |
| Memory Density | 18874368 bit | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | DDR SRAM | |
| Product Category | SRAM | |
| Length | 15 mm | |
| Width | 13 mm |
Индекс :
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