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- GS8673ET18BGK-550
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GS8673ET18BGK-550 Технические параметры
GSI Technology GS8673ET18BGK-550 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Factory Lead Time | 12 Weeks | |
| Package / Case | BGA-260 | |
| Surface Mount | YES | |
| Number of Terminals | 260Terminals | |
| Maximum Clock Rate | 550/375 MHz | |
| Supplier Package | BGA | |
| Data Rate Architecture | DDR | |
| Typical Operating Supply Voltage | 1.3500 V | |
| Minimum Operating Supply Voltage | 1.25 V | |
| Timing Type | Synchronous | |
| Number of Words | 4 MWordsWord | |
| Number of I/O Lines | 18 BitI/O Line | |
| Maximum Operating Supply Voltage | 1.4 V | |
| Mounting | Surface Mount | |
| Moisture Sensitive | Yes | |
| Maximum Clock Frequency | 550 MHz | |
| Maximum Operating Temperature | + 85 C | |
| Supply Voltage-Max | 1.4 V | |
| Minimum Operating Temperature | 0 C | |
| Factory Pack QuantityFactory Pack Quantity | 8 | |
| Supply Voltage-Min | 1.25 V | |
| Mounting Styles | SMD/SMT | |
| Interface Type | Parallel | |
| Manufacturer | GSI Technology | |
| Brand | GSI Technology | |
| Tradename | SigmaDDR-IIIe | |
| RoHS | Details | |
| Memory Types | DDR-III | |
| Package Description | HBGA, | |
| Package Style | GRID ARRAY, HEAT SINK/SLUG | |
| Number of Words Code | 4000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 0.4 ns | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | GS8673ET18BGK-550 | |
| Supply Voltage-Nom (Vsup) | 1.3 V | |
| Package Code | HBGA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | GSI TECHNOLOGY | |
| Risk Rank | 5.72 | |
| Usage Level | Commercial grade | |
| Operating Temperature | 0 to 70 °C | |
| Series | GS8673ET18BGK | |
| Packaging | Tray | |
| ECCN Code | 3A991.B.2.B | |
| Type | SigmaDDR-IIIe B2 | |
| Additional Feature | IT ALSO OPERATES AT 1.35 V TYPICAL VOLTAGE | |
| HTS Code | 8542.32.00.41 | |
| Subcategory | Memory & Data Storage | |
| Technology | CMOS | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 1 mm | |
| Reach Compliance Code | compliant | |
| Pin Count | 260 | |
| JESD-30 Code | R-PBGA-B260 | |
| Supply Voltage-Max (Vsup) | 1.4 V | |
| Temperature Grade | OTHER | |
| Supply Voltage-Min (Vsup) | 1.25 V | |
| Memory Size | 72 Mbit | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 1.49 A | |
| Architecture | Pipelined | |
| Organization | 4 M x 18 | |
| Seated Height-Max | 2.3 mm | |
| Memory Width | 18 | |
| Product Type | SRAM | |
| Density | 72 Mbit | |
| Memory Density | 75497472 bit | |
| Screening Level | Commercial | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | DDR SRAM | |
| Product Category | SRAM | |
| Width | 14 mm | |
| Length | 22 mm |
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