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- CDP1823EX
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CDP1823EX Технические параметры
Harris Corporation CDP1823EX technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | 24-DIP (0.600", 15.24mm) | |
| Surface Mount | NO | |
| Supplier Device Package | 24-PDIP | |
| Number of Terminals | 24Terminals | |
| Mfr | Harris Corporation | |
| Package | Bulk | |
| Memory Types | Volatile | |
| Product Status | Active | |
| Base Product Number | CDP18 | |
| Package Description | , | |
| Package Style | IN-LINE | |
| Number of Words Code | 128Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -40 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 250 ns | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | CDP1823EX | |
| Number of Words | 128 wordsWord | |
| Supply Voltage-Nom (Vsup) | 10 V | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.53 | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -40°C ~ 85°C (TA) | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| HTS Code | 8542.32.00.41 | |
| Voltage - Supply | 4V ~ 10.5V | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDIP-T24 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 10.5 V | |
| Temperature Grade | INDUSTRIAL | |
| Supply Voltage-Min (Vsup) | 4 V | |
| Memory Size | 1Kbit | |
| Operating Mode | ASYNCHRONOUS | |
| Access Time | 250 ns | |
| Memory Format | SRAM | |
| Memory Interface | Parallel | |
| Organization | 128X8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 225ns | |
| Memory Density | 1024 bit | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | STANDARD SRAM | |
| Memory Organization | 128 x 8 |
Индекс :
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