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GE10020 Технические параметры

Harris Corporation  GE10020 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Through Hole
Package / Case TO-204AE
Supplier Device Package TO-204AE
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 60 A
RoHS Non-Compliant
Свойство продукта Значение свойства
Series -
Operating Temperature -65°C ~ 200°C (TJ)
Power - Max 250 W
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 600 @ 15A, 5V
Current - Collector Cutoff (Max) 250μA
Vce Saturation (Max) @ Ib, Ic 2.4V @ 1.2A, 30A
Voltage - Collector Emitter Breakdown (Max) 300 V
Frequency - Transition -
Просмотр сходства
GE10020 brand manufacturers: Harris Corporation, Anli stock, GE10020 reference price.Harris Corporation. GE10020 parameters, GE10020 Datasheet PDF and pin diagram description download.You can use the GE10020 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find GE10020 pin diagram and circuit diagram and usage method of function,GE10020 electronics tutorials.You can download from the Anli.