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HFA3127MJ/883 Технические параметры

Harris Corporation  HFA3127MJ/883 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Mounting Type Through Hole
Package / Case 16-CDIP (0.300", 7.62mm)
Supplier Device Package 16-CERDIP
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 65mA
Свойство продукта Значение свойства
Series -
Operating Temperature -55°C ~ 125°C (TJ)
Power - Max 150mW
Transistor Type 5 NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 2V
Gain -
Voltage - Collector Emitter Breakdown (Max) 12V
Frequency - Transition 8GHz
Noise Figure (dB Typ @ f) 3.5dB @ 1GHz
HFA3127MJ/883 brand manufacturers: Harris Corporation, Anli stock, HFA3127MJ/883 reference price.Harris Corporation. HFA3127MJ/883 parameters, HFA3127MJ/883 Datasheet PDF and pin diagram description download.You can use the HFA3127MJ/883 Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find HFA3127MJ/883 pin diagram and circuit diagram and usage method of function,HFA3127MJ/883 electronics tutorials.You can download from the Anli.