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HGT1S7N60B3 Технические параметры

Harris Corporation  HGT1S7N60B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 14 A
Test Conditions 480V, 7A, 50Ohm, 15V
RoHS Non-Compliant
Свойство продукта Значение свойства
Series -
Operating Temperature -55°C ~ 150°C (TJ)
Input Type Standard
Power - Max 60 W
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 7A
IGBT Type -
Gate Charge 30 nC
Current - Collector Pulsed (Icm) 56 A
Td (on/off) @ 25°C 26ns/130ns
Switching Energy 160μJ (on), 120μJ (off)
Просмотр сходства
HGT1S7N60B3 brand manufacturers: Harris Corporation, Anli stock, HGT1S7N60B3 reference price.Harris Corporation. HGT1S7N60B3 parameters, HGT1S7N60B3 Datasheet PDF and pin diagram description download.You can use the HGT1S7N60B3 Transistors - IGBTs - Single, DSP Datesheet PDF, find HGT1S7N60B3 pin diagram and circuit diagram and usage method of function,HGT1S7N60B3 electronics tutorials.You can download from the Anli.