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HGTB12N60D1C Технические параметры

Harris Corporation  HGTB12N60D1C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-220-5
Surface Mount NO
Supplier Device Package TO-220-5
Number of Terminals 5Terminals
Transistor Element Material SILICON
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 12 A
Test Conditions -
RoHS Non-Compliant
Package Style FLANGE MOUNT
Moisture Sensitivity Levels NOT SPECIFIED
Package Body Material PLASTIC/EPOXY
Turn-on Time-Nom (ton) 100 ns
Turn-off Time-Nom (toff) 400 ns
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code No
Manufacturer Part Number HGTB12N60D1C
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Risk Rank 5.78
Свойство продукта Значение свойства
Series -
Operating Temperature -55°C ~ 150°C (TJ)
JESD-609 Code e0
Pbfree Code No
Terminal Finish TIN LEAD
Additional Feature CURRENT SENSING PILOT
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
JESD-30 Code R-PSFM-T5
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
Case Connection COLLECTOR
Input Type Standard
Power - Max 75 W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TS-001AA
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Collector Current-Max (IC) 18 A
IGBT Type -
Collector-Emitter Voltage-Max 600 V
Current - Collector Pulsed (Icm) 40 A
Td (on/off) @ 25°C -
Switching Energy -
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