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HGTD3N60B3S9A Технические параметры
Harris Corporation HGTD3N60B3S9A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Surface Mount | YES | |
| Supplier Device Package | TO-252-3 (DPAK) | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Harris Corporation | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 7 A | |
| Test Conditions | 480V, 3.5A, 82Ohm, 15V | |
| RoHS | Non-Compliant | |
| Package Description | PLASTIC PACKAGE-4 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 16 ns | |
| Turn-off Time-Nom (toff) | 220 ns | |
| Manufacturer Part Number | HGTD3N60B3S9A | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.6 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Additional Feature | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Reach Compliance Code | unknown | |
| Pin Count | 4 | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 33.3 W | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-252AA | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 3.5A | |
| Collector Current-Max (IC) | 7 A | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate Charge | 21 nC | |
| Current - Collector Pulsed (Icm) | 20 A | |
| Td (on/off) @ 25°C | 18ns/105ns | |
| Switching Energy | 66μJ (on), 88μJ (off) | |
| Reverse Recovery Time (trr) | 16 ns |
Индекс :
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