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HGTD3N60C3 Технические параметры

Harris Corporation  HGTD3N60C3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-Pak
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 6 A
Test Conditions -
RoHS Non-Compliant
Series -
Свойство продукта Значение свойства
Operating Temperature -40°C ~ 150°C (TJ)
Input Type Standard
Power - Max 33 W
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 3A
IGBT Type -
Gate Charge 13.8 nC
Current - Collector Pulsed (Icm) 24 A
Td (on/off) @ 25°C -
Switching Energy -
Reverse Recovery Time (trr) 10 ns
Просмотр сходства
HGTD3N60C3 brand manufacturers: Harris Corporation, Anli stock, HGTD3N60C3 reference price.Harris Corporation. HGTD3N60C3 parameters, HGTD3N60C3 Datasheet PDF and pin diagram description download.You can use the HGTD3N60C3 Transistors - IGBTs - Single, DSP Datesheet PDF, find HGTD3N60C3 pin diagram and circuit diagram and usage method of function,HGTD3N60C3 electronics tutorials.You can download from the Anli.