Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
HGTD7N60B3 Технические параметры
Harris Corporation HGTD7N60B3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Surface Mount | NO | |
| Supplier Device Package | I-PAK | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Harris Corporation | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 14 A | |
| Test Conditions | 480V, 7A, 50Ohm, 15V | |
| RoHS | Non-Compliant | |
| Package Style | IN-LINE | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | No | |
| Manufacturer Part Number | HGTD7N60B3 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.64 | |
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE | |
| Input Type | Standard | |
| Power - Max | 60 W | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-251AA | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 7A | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate Charge | 30 nC | |
| Current - Collector Pulsed (Icm) | 56 A | |
| Td (on/off) @ 25°C | 26ns/130ns | |
| Switching Energy | 160μJ (on), 120μJ (off) |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ