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HGTG12N60C3DR Технические параметры
Harris Corporation HGTG12N60C3DR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - IGBTs - Single | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-247 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Harris Corporation | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 24 A | |
| Test Conditions | 480V, 12A, 25Ohm, 15V | |
| RoHS | Non-Compliant | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 36 ns | |
| Turn-off Time-Nom (toff) | 290 ns | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | No | |
| Manufacturer Part Number | HGTG12N60C3DR | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.65 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Series | - | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | LOW CONDUCTION LOSS, ULTRA FAST SWITCHING | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Case Connection | COLLECTOR | |
| Input Type | Standard | |
| Power - Max | 104 W | |
| Transistor Application | MOTOR CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 12A | |
| Collector Current-Max (IC) | 24 A | |
| IGBT Type | - | |
| Collector-Emitter Voltage-Max | 600 V | |
| Gate Charge | 71 nC | |
| Current - Collector Pulsed (Icm) | 48 A | |
| Td (on/off) @ 25°C | 37ns/120ns | |
| Switching Energy | 400μJ (on), 340μJ (off) | |
| Reverse Recovery Time (trr) | 37 ns |
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