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HM4-6516B/883 Технические параметры
Harris Corporation HM4-6516B/883 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Mounting Type | Through Hole | |
| Package / Case | 24-CDIP (0.600", 15.24mm) | |
| Surface Mount | YES | |
| Supplier Device Package | 24-CERDIP | |
| Number of Terminals | 32Terminals | |
| Mfr | Harris Corporation | |
| Package | Bulk | |
| Product Status | Active | |
| Memory Types | Volatile | |
| Base Product Number | HM4-6516 | |
| Package Description | , | |
| Package Style | CHIP CARRIER | |
| Number of Words Code | 2000Words Codes | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 120 ns | |
| Operating Temperature-Max | 125 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | HM4-6516B/883 | |
| Number of Words | 2048 wordsWord | |
| Supply Voltage-Nom (Vsup) | 5 V | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.69 | |
| Series | - |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Operating Temperature | -55°C ~ 125°C (TA) | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| ECCN Code | 3A001.A.2.C | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | ADDRESS LATCH | |
| HTS Code | 8542.32.00.41 | |
| Voltage - Supply | 4.5V ~ 5.5V | |
| Terminal Position | QUAD | |
| Terminal Form | NO LEAD | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-CQCC-N32 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 5.5 V | |
| Temperature Grade | MILITARY | |
| Supply Voltage-Min (Vsup) | 4.5 V | |
| Memory Size | 16Kbit | |
| Operating Mode | ASYNCHRONOUS | |
| Access Time | 120 ns | |
| Memory Format | SRAM | |
| Memory Interface | Parallel | |
| Organization | 2KX8 | |
| Memory Width | 8 | |
| Write Cycle Time - Word, Page | 170ns | |
| Memory Density | 16384 bit | |
| Parallel/Serial | PARALLEL | |
| Memory IC Type | STANDARD SRAM | |
| Memory Organization | 2K x 8 |
Индекс :
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