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RFL1N20L Технические параметры
Harris Semiconductor RFL1N20L technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Drain Current-Max (ID) | 1 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| HTS Code | 8541.29.00.95 | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-205AF | |
| Drain-source On Resistance-Max | 3.65 Ω | |
| DS Breakdown Voltage-Min | 200 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 8.3 W | |
| Feedback Cap-Max (Crss) | 35 pF | |
| Power Dissipation Ambient-Max | 8.33 W |
RFL1N20L Документы
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