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HAT2099H-EL-E Технические параметры
HITACHI HAT2099H-EL-E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | HITACHI | |
| Surface Mount | YES | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Manufacturer Package Code | PTZZ0005DA-A5 | |
| Reflow Temperature-Max (s) | 20 | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | HAT2099H-EL-E | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Renesas Electronics Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Risk Rank | 5.22 | |
| Part Package Code | LFPAK | |
| Drain Current-Max (ID) | 50 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Subcategory | FET General Purpose Power | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 5 | |
| JESD-30 Code | R-PSSO-G4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain Current-Max (Abs) (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0073 Ω | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 30 W |
Индекс :
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