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2SB1106 Технические параметры
Hitachi Ltd 2SB1106 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HITACHI LTD | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| Case Connection | COLLECTOR | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| JEDEC-95 Code | TO-220AB | |
| Power Dissipation-Max (Abs) | 40 W | |
| Collector Current-Max (IC) | 6 A | |
| DC Current Gain-Min (hFE) | 1000 | |
| Collector-Emitter Voltage-Max | 120 V |
2SB1106 Документы
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