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HTNFET-D Технические параметры

Honeywell Aerospace  HTNFET-D technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Honeywell Aerospace
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-CDIP Exposed Pad
Supplier Device Package 8-CDIP-EP
Drive Voltage (Max Rds On, Min Rds On) 5V
Power Dissipation (Max) 50W Tj
Operating Temperature -55°C~225°C TJ
Packaging Bulk
Series HTMOS™
Published 2004
Свойство продукта Значение свойства
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 28V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 5V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) 10V
Input Capacitance 290pF
Rds On Max 400 mΩ
RoHS Status Non-RoHS Compliant
Просмотр сходства
HTNFET-D brand manufacturers: Honeywell Aerospace, Anli stock, HTNFET-D reference price.Honeywell Aerospace. HTNFET-D parameters, HTNFET-D Datasheet PDF and pin diagram description download.You can use the HTNFET-D Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find HTNFET-D pin diagram and circuit diagram and usage method of function,HTNFET-D electronics tutorials.You can download from the Anli.