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- H5TQ2G63BFR-H9C
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H5TQ2G63BFR-H9C Технические параметры
Hynix H5TQ2G63BFR-H9C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Memory | |
| Марка | ||
| Surface Mount | YES | |
| Number of Terminals | 96Terminals | |
| Package Description | TFBGA, BGA96,9X16,32 | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Number of Words Code | 128000000Words Codes | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Equivalence Code | BGA96,9X16,32 | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Access Time-Max | 20 ns | |
| Operating Temperature-Max | 85 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | H5TQ2G63BFR-H9C | |
| Clock Frequency-Max (fCLK) | 667 MHz | |
| Number of Words | 134217728 wordsWord | |
| Supply Voltage-Nom (Vsup) | 1.5 V | |
| Package Code | TFBGA | |
| Package Shape | RECTANGULAR | |
| Manufacturer | SK Hynix Inc | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SK HYNIX INC | |
| Risk Rank | 5.79 | |
| Part Package Code | BGA | |
| ECCN Code | EAR99 | |
| Additional Feature | AUTO/SELF REFRESH | |
| HTS Code | 8542.32.00.36 | |
| Subcategory | DRAMs | |
| Technology | CMOS | |
| Terminal Position | BOTTOM |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Number of Functions | 1Function | |
| Terminal Pitch | 0.8 mm | |
| Reach Compliance Code | unknown | |
| Pin Count | 96 | |
| JESD-30 Code | R-PBGA-B96 | |
| Qualification Status | Not Qualified | |
| Supply Voltage-Max (Vsup) | 1.575 V | |
| Power Supplies | 1.5 V | |
| Temperature Grade | OTHER | |
| Supply Voltage-Min (Vsup) | 1.425 V | |
| Number of Ports | 1Port | |
| Operating Mode | SYNCHRONOUS | |
| Supply Current-Max | 0.19 mA | |
| Organization | 128MX16 | |
| Output Characteristics | 3-STATE | |
| Seated Height-Max | 1.2 mm | |
| Memory Width | 16 | |
| Standby Current-Max | 0.012 A | |
| Memory Density | 2147483648 bit | |
| I/O Type | COMMON | |
| Memory IC Type | DDR DRAM | |
| Refresh Cycles | 8192 | |
| Sequential Burst Length | 4,8 | |
| Interleaved Burst Length | 4,8 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Self Refresh | YES | |
| Width | 9 mm | |
| Length | 13 mm |
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