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ZSSC3170KITV2P1 Технические параметры

IDT  ZSSC3170KITV2P1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Evaluation and Demonstration Boards and Kits
Марка IDT
Vds - Drain-Source Breakdown Voltage 60 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qualification AEC-Q101
Pd - Power Dissipation 2.4 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Unit Weight 0.001076 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 5000
Mounting Styles SMD/SMT
Channel Mode Enhancement
Manufacturer Panjit
Brand Panjit
Qg - Gate Charge 13.5 nC
Rds On - Drain-Source Resistance 17 mOhms
RoHS Details
Свойство продукта Значение свойства
Id - Continuous Drain Current 33 A
Package Bulk
Base Product Number ZSSC3170
Mfr IDT, Integrated Device Technology Inc
Product Status Active
Packaging MouseReel
Series -
Type Interface
Subcategory MOSFETs
Technology Si
Function Sensor Signal Conditioner
Number of Channels 1 ChannelChannel
Utilized IC / Part ZSSC3170
Supplied Contents Board(s)
Product Type MOSFET
Primary Attributes -
Embedded -
Secondary Attributes -
Product Category MOSFET
Просмотр сходства
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