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BAR151E6327BTSA1 Технические параметры

Infineon  BAR151E6327BTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Infineon
Factory Lead Time 4 Weeks
Surface Mount YES
Diode Element Material SILICON
Number of Terminals 3Terminals
Diode Capacitance 0.5@50V
Package Description R-PDSO-G3
Package Style SMALL OUTLINE
Package Body Material PLASTIC/EPOXY
Operating Temperature-Max 150 °C
Manufacturer Part Number BAR151E6327BTSA1
Power Dissipation (Max) 0.25 W
Package Shape RECTANGULAR
Manufacturer Infineon Technologies AG
Number of Elements 2 Elements
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Risk Rank 5.7
Свойство продукта Значение свойства
ECCN Code EAR99
Applications ATTENUATOR; SWITCHING
Additional Feature LOW DISTORTION
HTS Code 8541.10.00.80
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G3
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Type PIN DIODE
Power Dissipation 250
Forward Current 140
Diode Configuration Dual Common Cathode
Breakdown Voltage-Min 100 V
Frequency Band HIGH FREQUENCY
Diode Capacitance-Max 0.5 pF
Minority Carrier Lifetime-Nom 1 µs
Diode Forward Resistance-Max 12 Ω

BAR151E6327BTSA1 Документы

  • Datasheets
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