Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Infineon BAR6305E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | Infineon | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 3Pins | |
| Diode Element Material | SILICON | |
| Number of Terminals | 3Terminals | |
| Diode Capacitance | 0.3@5V | |
| RoHS | Compliant | |
| Package Description | R-PDSO-G3 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 125 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | BAR6305E6327XT | |
| Power Dissipation (Max) | 0.25 W | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.77 | |
| ECCN Code | EAR99 | |
| Type | Switch | |
| Applications | SWITCHING | |
| HTS Code | 8541.10.00.80 | |
| Max Power Dissipation | 250 mW | |
| Technology | POSITIVE-INTRINSIC-NEGATIVE | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G3 | |
| Configuration | COMMON CATHODE, 2 ELEMENTS | |
| Element Configuration | Common Cathode | |
| Diode Type | PIN DIODE | |
| Power Dissipation | 250 | |
| Forward Current | 100 | |
| Diode Configuration | Dual Common Cathode | |
| Breakdown Voltage-Min | 50 V | |
| Frequency Band | S BAND | |
| Diode Capacitance-Max | 0.3 pF | |
| Minority Carrier Lifetime-Nom | 0.075 µs | |
| Diode Forward Resistance-Max | 2 Ω |