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BAR6503WE6327XT Технические параметры

Infineon  BAR6503WE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка Infineon
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Surface Mount YES
Number of Pins 2Pins
Diode Element Material SILICON
Number of Terminals 2Terminals
RoHS Compliant
Risk Rank 5.77
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Life Cycle Code Active
Number of Elements 1 Element
Manufacturer Infineon Technologies AG
Package Shape RECTANGULAR
Power Dissipation (Max) 0.25 W
Manufacturer Part Number BAR6503WE6327XT
Rohs Code Yes
Operating Temperature-Max 125 °C
Reflow Temperature-Max (s) NOT SPECIFIED
Свойство продукта Значение свойства
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Style SMALL OUTLINE
Package Description R-PDSO-G2
Type Switch
Applications SWITCHING
Technology POSITIVE-INTRINSIC-NEGATIVE
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
JESD-30 Code R-PDSO-G2
Configuration SINGLE
Diode Type PIN DIODE
Forward Current 100
Breakdown Voltage-Min 30 V
Frequency Band VERY HIGH FREQUENCY
Diode Capacitance-Max 0.9 pF
Minority Carrier Lifetime-Nom 0.08 µs
Diode Forward Resistance-Max 0.9 Ω
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BAR6503WE6327XT Документы

  • Datasheets
BAR6503WE6327XT brand manufacturers: Infineon, Anli stock, BAR6503WE6327XT reference price.Infineon. BAR6503WE6327XT parameters, BAR6503WE6327XT Datasheet PDF and pin diagram description download.You can use the BAR6503WE6327XT Diodes - RF, DSP Datesheet PDF, find BAR6503WE6327XT pin diagram and circuit diagram and usage method of function,BAR6503WE6327XT electronics tutorials.You can download from the Anli.