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BAS116E6327XT Технические параметры
Infineon BAS116E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Rectifiers - Single | |
| Марка | Infineon | |
| Package / Case | SOT-23-3 | |
| Vr - Reverse Voltage | 85 V | |
| Ir - Reverse Current | 80 nA | |
| Qualification | AEC-Q101 | |
| Pd - Power Dissipation | 370 mW | |
| Maximum Operating Temperature | + 150 C | |
| Unit Weight | 0.000282 oz | |
| Minimum Operating Temperature | - 65 C | |
| Factory Pack QuantityFactory Pack Quantity | 30000 | |
| Mounting Styles | SMD/SMT | |
| Part # Aliases | BAS 116 SP000010194 E6327 BAS116E6327HTSA1 | |
| Manufacturer | Infineon | |
| Brand | Infineon Technologies | |
| If - Forward Current | 250 mA |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reverse Voltage | 85 V | |
| Packaging | Reel | |
| Type | Standard Recovery Rectifiers | |
| Subcategory | Diodes & Rectifiers | |
| Termination Style | Solder Tail | |
| Configuration | Single | |
| Max Surge Current | 4.5 A | |
| Product Type | Diodes - General Purpose, Power, Switching | |
| Recovery Time | 0.6 us | |
| Product | General Purpose Diodes | |
| Vf - Forward Voltage | 1.25 V | |
| Product Category | Diodes - General Purpose, Power, Switching | |
| Width | 1.3 mm | |
| Height | 1 mm | |
| Length | 2.9 mm |
BAS116E6327XT Документы
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