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BC850CWE6327XT Технические параметры

Infineon  BC850CWE6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Category Bipolar Small Signal
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 50
Maximum Collector-Emitter Voltage (V) 45
Maximum Emitter Base Voltage (V) 6
Operating Junction Temperature (°C) 150
Maximum Base Emitter Saturation Voltage (V) 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA
Maximum Collector-Emitter Saturation Voltage (V) 0.6@5mA@100mA|[email protected]@10mA
Maximum DC Collector Current (A) 0.1
Maximum Collector Cut-Off Current (nA) 15(Typ)
Minimum DC Current Gain 420@2mA@5V
Свойство продукта Значение свойства
Maximum Power Dissipation (mW) 250
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 3
Standard Package Name SOT
Supplier Package SOT-323
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 3
Configuration Single
Просмотр сходства

BC850CWE6327XT Документы

  • Datasheets
BC850CWE6327XT brand manufacturers: Infineon, Anli stock, BC850CWE6327XT reference price.Infineon. BC850CWE6327XT parameters, BC850CWE6327XT Datasheet PDF and pin diagram description download.You can use the BC850CWE6327XT Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC850CWE6327XT pin diagram and circuit diagram and usage method of function,BC850CWE6327XT electronics tutorials.You can download from the Anli.