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BC858C Технические параметры

Infineon  BC858C technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Infineon
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
Enclosure SOT 23-3
Manuf. code INF
Packaging type Tape cut
Channels# 1
Content 1pc(s)
Power (max) P(TOT) 330mW
Manufacturer Infineon Technologies
Collector current -100mA
Package Bulk
Свойство продукта Значение свойства
Current-Collector (Ic) (Max) 100 mA
Mfr Infineon Technologies
Product Status Obsolete
Operating Temperature 150°C (TJ)
Series -
Type PNP
Power - Max 310 mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Current - Collector Cutoff (Max) -
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Frequency - Transition 150MHz
Просмотр сходства
BC858C brand manufacturers: Infineon, Anli stock, BC858C reference price.Infineon. BC858C parameters, BC858C Datasheet PDF and pin diagram description download.You can use the BC858C Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC858C pin diagram and circuit diagram and usage method of function,BC858C electronics tutorials.You can download from the Anli.