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BCP68E6327XT Технические параметры

Infineon  BCP68E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.75
Category Bipolar Power
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 25
Maximum Collector-Emitter Voltage (V) 20
Maximum Emitter Base Voltage (V) 5
Свойство продукта Значение свойства
Maximum Collector-Emitter Saturation Voltage (V) 0.5@100mA@1A
Maximum DC Collector Current (A) 1
Minimum DC Current Gain [email protected]@1V
Maximum Power Dissipation (mW) 1500
Maximum Transition Frequency (MHz) 100(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Configuration Single Dual Collector
Просмотр сходства
BCP68E6327XT brand manufacturers: Infineon, Anli stock, BCP68E6327XT reference price.Infineon. BCP68E6327XT parameters, BCP68E6327XT Datasheet PDF and pin diagram description download.You can use the BCP68E6327XT Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BCP68E6327XT pin diagram and circuit diagram and usage method of function,BCP68E6327XT electronics tutorials.You can download from the Anli.