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- BCR 10PN H6730
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BCR 10PN H6730 Технические параметры
Infineon BCR 10PN H6730 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
| Марка | Infineon | |
| Mounting Type | Through Hole | |
| Package / Case | Radial - 3 Leads | |
| Surface Mount | YES | |
| Supplier Device Package | PG-SOT363-6-1 | |
| Number of Terminals | 6Terminals | |
| Transistor Element Material | SILICON | |
| Lead Free Status / RoHS Status | -- | |
| Voltage Rated | 20V | |
| Lifetime @ Temp. | 1000 Hrs @ 85°C | |
| Transistor Polarity | NPN | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 100mA | |
| Mfr | Infineon Technologies | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 130 MHz | |
| Manufacturer Part Number | BCR10PNH6730 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Infineon Technologies AG | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Risk Rank | 5.62 | |
| Operating Temperature | -55°C ~ 125°C | |
| Series | TANTALEX®, 299D | |
| Packaging | Bulk | |
| Size / Dimension | 0.360 L x 0.360 W (9.14mm x 9.14mm) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Tolerance | ±20% | |
| Part Status | Active | |
| Type | Conformal Coated | |
| Additional Feature | BUILT-IN BIAS RESISTOR RATIO IS 1 | |
| Capacitance | 68µF | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | R-PDSO-G6 | |
| ESR (Equivalent Series Resistance) | -- | |
| Failure Rate | -- | |
| Lead Spacing | -- | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | |
| Manufacturer Size Code | F | |
| Power - Max | 250mW | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | NPN AND PNP | |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Frequency - Transition | 130MHz | |
| Collector Current-Max (IC) | 0.1 A | |
| DC Current Gain-Min (hFE) | 30 | |
| Resistor - Base (R1) | 10kOhms | |
| Continuous Collector Current | 100 | |
| Resistor - Emitter Base (R2) | 10kOhms | |
| Collector-Emitter Voltage-Max | 50 V | |
| Features | General Purpose | |
| Height Seated (Max) | 0.620 (15.74mm) | |
| Ratings | -- |
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