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BCR169S Технические параметры

Infineon  BCR169S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Марка Infineon
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-6-1
Package Bulk
Current-Collector (Ic) (Max) 100mA
Mfr Infineon Technologies
Product Status Active
Series Automotive, AEC-Q101
Свойство продукта Значение свойства
Power - Max 250mW
Transistor Type 2 PNP - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 5mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) -
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BCR169S Документы

  • Datasheets
BCR169S brand manufacturers: Infineon, Anli stock, BCR169S reference price.Infineon. BCR169S parameters, BCR169S Datasheet PDF and pin diagram description download.You can use the BCR169S Transistors - Bipolar (BJT) - Arrays, Pre-Biased, DSP Datesheet PDF, find BCR169S pin diagram and circuit diagram and usage method of function,BCR169S electronics tutorials.You can download from the Anli.