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BCV27E6433XT Технические параметры

Infineon  BCV27E6433XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Infineon
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.21.00.75
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector-Emitter Voltage (V) 30
Maximum Collector Base Voltage (V) 40
Maximum Emitter Base Voltage (V) 10
Maximum Base Emitter Saturation Voltage (V) [email protected]@100mA
Maximum Continuous DC Collector Current (A) 0.5
Maximum Collector Cut-Off Current (uA) 0.1
Operating Junction Temperature (°C) 150
Typical Current Gain Bandwidth (MHz) 170
Maximum Collector-Emitter Saturation Voltage (V) [email protected]@100mA
Minimum DC Current Gain [email protected]@5V|20000@100mA@5V|10000@10mA@5V|[email protected]@1V
Свойство продукта Значение свойства
Maximum Power Dissipation (mW) 360
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Mounting Surface Mount
Package Height 1(Max)
Package Width 1.3
Package Length 2.9
PCB changed 3
Standard Package Name SOT
Supplier Package SOT-23
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Pin Count 3
Configuration Single
BCV27E6433XT brand manufacturers: Infineon, Anli stock, BCV27E6433XT reference price.Infineon. BCV27E6433XT parameters, BCV27E6433XT Datasheet PDF and pin diagram description download.You can use the BCV27E6433XT Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BCV27E6433XT pin diagram and circuit diagram and usage method of function,BCV27E6433XT electronics tutorials.You can download from the Anli.