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BCW68HE6327T Технические параметры
Infineon BCW68HE6327T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - Single | |
| Марка | Infineon | |
| Material | Si | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8541.21.00.95 | |
| Automotive | Yes | |
| PPAP | Unknown | |
| Category | Bipolar Small Signal | |
| Number of Elements per Chip | 1 | |
| Maximum Collector Base Voltage (V) | 60 | |
| Maximum Collector-Emitter Voltage (V) | 45 | |
| Maximum Emitter Base Voltage (V) | 5 | |
| Maximum Base Emitter Saturation Voltage (V) | 2@50mA@500mA|1.25@10mA@100mA | |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.7@50mA@500mA|0.3@10mA@100mA | |
| Maximum DC Collector Current (A) | 0.8 | |
| Minimum DC Current Gain | 100@500mA@2V|250@100mA@1V|180@10mA@1V|80@100uA@10V | |
| Maximum Power Dissipation (mW) | 330 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Transition Frequency (MHz) | 200(Typ) | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 150 | |
| Supplier Temperature Grade | Automotive | |
| Mounting | Surface Mount | |
| Package Height | 1(Max) | |
| Package Width | 1.3 | |
| Package Length | 2.9 | |
| PCB changed | 3 | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-23 | |
| Lead Shape | Gull-wing | |
| Packaging | Tape and Reel | |
| Part Status | Unconfirmed | |
| Type | PNP | |
| Pin Count | 3 | |
| Configuration | Single |
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