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BCX5410E6327T Технические параметры

Infineon  BCX5410E6327T technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.75
Category Bipolar Power
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 45
Maximum Collector-Emitter Voltage (V) 45
Maximum Emitter Base Voltage (V) 5
Maximum Collector-Emitter Saturation Voltage (V) 0.5@50mA@500mA
Свойство продукта Значение свойства
Maximum DC Collector Current (A) 1
Minimum DC Current Gain 25@5mA@2V|63@150mA@2V|25@500mA@2V
Maximum Power Dissipation (mW) 2000
Maximum Transition Frequency (MHz) 100(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Automotive
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Configuration Single Dual Collector
Просмотр сходства
BCX5410E6327T brand manufacturers: Infineon, Anli stock, BCX5410E6327T reference price.Infineon. BCX5410E6327T parameters, BCX5410E6327T Datasheet PDF and pin diagram description download.You can use the BCX5410E6327T Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BCX5410E6327T pin diagram and circuit diagram and usage method of function,BCX5410E6327T electronics tutorials.You can download from the Anli.