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BCX56H6327XTSA1 Технические параметры

Infineon  BCX56H6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка Infineon
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case SOT
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 80V
Number of Elements 1 Element
Power Dissipation (Max) 2W
Packaging Tape & Reel
Published 2001
ECCN Code EAR99
Max Operating Temperature 150°C
Свойство продукта Значение свойства
Min Operating Temperature -65°C
Frequency 100MHz
Polarity NPN
Power Dissipation 2W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 1A
Max Breakdown Voltage 80V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

BCX56H6327XTSA1 Документы

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