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BFG196E6327XT Технические параметры
Infineon BFG196E6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Infineon | |
| Material | Si | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| Automotive | Yes | |
| PPAP | Unknown | |
| Number of Elements per Chip | 1 | |
| Maximum Collector Base Voltage (V) | 20 | |
| Maximum Collector-Emitter Voltage (V) | 12 | |
| Maximum Collector-Emitter Voltage Range (V) | &l;20 | |
| Maximum Emitter Base Voltage (V) | 2 | |
| Maximum DC Collector Current (A) | 0.15 | |
| Maximum DC Collector Current Range (A) | 0.12 to 0.5 | |
| Minimum DC Current Gain | 70@50mA@8V | |
| Minimum DC Current Gain Range | 50 to 120 | |
| Maximum Power Dissipation (mW) | 800 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Maximum Transition Frequency (MHz) | 7500(Typ) | |
| Minimum Operating Temperature (°C) | -65 | |
| Maximum Operating Temperature (°C) | 150 | |
| Mounting | Surface Mount | |
| Package Height | 1.6 | |
| Package Width | 3.5 | |
| Package Length | 6.5 | |
| PCB changed | 3 | |
| Tab | Tab | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-223 | |
| Lead Shape | Gull-wing | |
| Packaging | Tape and Reel | |
| Part Status | Obsolete | |
| Type | NPN | |
| Pin Count | 4 | |
| Configuration | Single Dual Emitter |
BFG196E6327XT Документы
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