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BFP420E6433XT Технические параметры

Infineon  BFP420E6433XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Mount Surface Mount
Number of Pins 4Pins
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 15
Maximum Collector-Emitter Voltage (V) 4.5
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 1.5
Maximum DC Collector Current (A) 0.06
Maximum DC Collector Current Range (A) 0.06 to 0.12
Minimum DC Current Gain 60@20mA@4V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 210
Maximum Transition Frequency (MHz) 25000(Typ)
Minimum Operating Temperature (°C) -65
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Свойство продукта Значение свойства
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 3
Tab Tab
Standard Package Name SOT
Supplier Package SOT-343
Lead Shape Gull-wing
Number of Elements 1 Element
RoHS Compliant
Packaging Tape and Reel
Part Status Obsolete
Type NPN
Max Operating Temperature 150 °C
Min Operating Temperature -65 °C
Frequency 25 GHz
Pin Count 4
Polarity NPN
Configuration Single Dual Emitter
Power Dissipation 160 mW
Collector Emitter Voltage (VCEO) 4.5 V
Collector Base Voltage (VCBO) 15 V
Emitter Base Voltage (VEBO) 1.5 V
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BFP420E6433XT Документы

  • Datasheets
BFP420E6433XT brand manufacturers: Infineon, Anli stock, BFP420E6433XT reference price.Infineon. BFP420E6433XT parameters, BFP420E6433XT Datasheet PDF and pin diagram description download.You can use the BFP420E6433XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP420E6433XT pin diagram and circuit diagram and usage method of function,BFP420E6433XT electronics tutorials.You can download from the Anli.