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BFP450L6327XT Технические параметры

Infineon  BFP450L6327XT technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка Infineon
Material Si
EU RoHS Compliant
ECCN (US) EAR99
Automotive Yes
PPAP Unknown
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 15
Maximum Collector-Emitter Voltage (V) 4.5
Maximum Collector-Emitter Voltage Range (V) &l;20
Maximum Emitter Base Voltage (V) 1.5
Maximum DC Collector Current (A) 0.17
Maximum DC Collector Current Range (A) 0.12 to 0.5
Minimum DC Current Gain 50@90mA@3V|60@50mA@4V
Minimum DC Current Gain Range 50 to 120
Maximum Power Dissipation (mW) 500
Свойство продукта Значение свойства
Maximum Transition Frequency (MHz) 24000(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 0.9(Max)
Package Width 1.25
Package Length 2
PCB changed 3
Tab Tab
Standard Package Name SOT
Supplier Package SOT-343
Lead Shape Gull-wing
Packaging Tape and Reel
Part Status Unconfirmed
Type NPN
Pin Count 4
Configuration Single Dual Emitter

BFP450L6327XT Документы

  • Datasheets
BFP450L6327XT brand manufacturers: Infineon, Anli stock, BFP450L6327XT reference price.Infineon. BFP450L6327XT parameters, BFP450L6327XT Datasheet PDF and pin diagram description download.You can use the BFP450L6327XT Transistors - Bipolar (BJT) - RF, DSP Datesheet PDF, find BFP450L6327XT pin diagram and circuit diagram and usage method of function,BFP450L6327XT electronics tutorials.You can download from the Anli.